Bandgap engineering of CdS thin films through alloying with CdTe by thermal evaporation

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dc.contributor.authorFAYAZ AHMAD
dc.date.accessioned2025-12-03T21:30:52Z
dc.date.available2025-12-03T21:30:52Z
dc.date.issued2022
dc.description.abstractBand gap of CdS thin film was engineering through alloying with CdTe by thermal evaporation. In this study, a very simple technique was used to tune the band of CdS films for the desired applications. A different mass concentration of CdTe was added in the CdS powered as starting material. To grow the CdS1-x Te x films. At different concentration of CdTe 0%, 10 %, 15% and 20% the band gap of alloyed CdS1-x Te x films are 2.6 eV, 2.1 eV ,1.9 eV and 1.7 eV respectively. XRD analysis showed that all prepared films are polycrystalline. Optical properties showed that transmittance of CdS was decreased by increasing the CdTe content. It was also noticed that band gap of CdS was decreased by increasing the CdTe content in the film. The morphological properties revealed that the prepared films are not smooth. The voids were present in the films which depicts that high evaporation rate by thermal evaporation. EDX analysis showed that the presence of all the constituents which were present in the initial compounds. The content of Te in the film was increased by increasing the CdTe content in the precursor materials. The electrochemical properties of the prepared samples were measured by three electrode chemical cell and the result showed that 15% CdTe doped CdS films showed better photocurrent response compared to other films because of optimum band gap for water splitting.
dc.identifier.urihttps://escholar.umt.edu.pk/handle/123456789/15020
dc.language.isoen
dc.publisherUMT, Lahore
dc.titleBandgap engineering of CdS thin films through alloying with CdTe by thermal evaporation
dc.typeThesis
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