Preparation of 2D-WSE2 structures by salinization of WO3 thin films for hydrogen generation
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Date
2021
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UMT, Lahore
Abstract
Recently, researchers have focused on ultrathin films of 2-D materials because of the interesting features they exhibit in compared to their bulk counterparts. The properties and processing of graphene have been the primary focus of this field's research for many years, but recently, researchers have begun to shift their focus to other two-dimensional material systems, such as hexagonal boron nitride (h-BN) and the transition metal dichalcogenide (TMD) compounds. These compounds are fascinating for a variety of applications, from tunneling field effect transistors (TFETs) to hydrogen evolution catalysts, because of their unique combination of optical, electrical, thermal, and chemical characteristics. Tungsten diselenide (WSe2) has been getting a lot of interest as of late because to its direct band gap in the visible spectrum, which has the potential to be used in a variety of technological applications. This thesis, however, aims to develop wafer-scale WSe2 since the aforementioned exploration is not currently handled at a sufficiently big scale for hydrogen generation using water splitting. Under an argon gas carrier, tungsten diselenide films were produced through chemical vapour deposition via salinization of a tungsten oxide WO3 film deposited via thermal vapour deposition. Research into the effects of selenium overpressure, reaction temperature, system pressure, heat treatment, substrate, and oxide film treatment on film growth was carried out. Photo spectroscopy, scanning electron microscopy (SEM), Potentiostat (PEC), and X-ray diffraction were used to analyses the films. It was discovered that WSe2 could be generated by the batch synthesis method under a variety of experimental settings; however, the highest results of current were achieved at temperature 800 °C, with argon carrier gas ratio.